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VHFD 37
Symbol
Conditions
Characteristic Values
10
I R , I D
V T , V F
V R = V RRM ; V D = V DRM
I T , I F = 45 A; T VJ = 25 ° C
T VJ = T VJM
T VJ = 25 ° C
≤
≤
≤
5
0.3
1.45
mA
mA
V
V G
V
1: I GT , T VJ = 125°C
2: I GT , T VJ = 25°C
3: I GT , T VJ = -40°C
V T0
r T
V GT
I GT
For power-loss calculations only (T VJ = 125°C)
V D = 6 V; T VJ = 25 ° C
T VJ = -40 ° C
V D = 6 V; T VJ = 25 ° C
T VJ = -40 ° C
T VJ = 125 ° C
≤
≤
≤
≤
≤
0.85
13
1.0
1.2
65
80
50
V
m Ω
V
V
mA
mA
mA
1
1
2
3
4
5
6
V GD
I GD
I L
I H
T VJ = T VJM ; V D = 2/3 V DRM
T VJ = T VJM ; V D = 2/3 V DRM
I G = 0.3 A; t G = 30 μ s; T VJ = 25 ° C
di G /dt = 0.3 A/ μ s; T VJ = -40 ° C
T VJ = 125 ° C
T VJ = 25 ° C; V D = 6 V; R GK = ∞
≤
≤
≤
≤
≤
≤
0.2
5
150
200
100
100
V
mA
mA
mA
mA
mA
4: P GAV = 0.5 W
5: P GM = 1 W
I GD , T VJ = 125°C 6: P GM = 10 W
0.1
1 10 100 1000 mA
I G
Fig. 1 Gate trigger range
t gd
T VJ = 25 ° C; V D = 1/2 V DRM
I G = 0.3 A; di G /dt = 0.3 A/ μ s
≤
2
μ s
1000
T VJ = 25°C
t q
Q r
R thJC
T VJ = 125 ° C, I T = 15 A, t P = 300 μ s, V R = 100 V
di/dt = -10 A/ μ s, dv/dt = 20 V/ μ s, V D = 2/3 V DRM
per thyristor (diode); DC current
typ.
150
75
1.2
μ s
μ C
K/W
μ s
t gd
100
typ.
Limit
per module
0.3
K/W
R thJH
per thyristor (diode); DC current
per module
1.55
0.39
K/W
K/W
10
Field Diodes
Symbol
Conditions
Maximum Ratings
I FAV
I FAVM
I FRMS
T H = 85 ° C, per Diode
per diode
per diode
4
4
6
A
A
A
1
10
100
I G
mA 1000
I FSM
I 2 t
I R
T VJ = 45 ° C;
V R = 0 V
T VJ = T VJM
V R = 0 V
T VJ = 45 ° C
V R = 0 V
T VJ = T VJM
V R = 0 V
V R = V RRM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T VJ = T VJM
T VJ = 25 ° C
100
110
85
94
50
50
36
37
1
0.15
A
A
A
A
A 2 s
A 2 s
A 2 s
A 2 s
mA
mA
Fig. 2 Gate controlled delay time t gd
V F
V T0
r T
R thJC
R thJH
I F = 21 A; T VJ = 25 ° C
For power-loss calculations only (T VJ = 125°C)
per diode; DC current
per diode; DC current
1.83
0.9
50
4.4
5.2
V
V
m Ω
K/W
K/W
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
? 2010 IXYS All rights reserved
20100705a
2-3
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